ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET, POWERQFN 3X3, 40V, 48A,
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.6mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：48.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2268 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (3x3)
- Package / Case：8-PowerVDFN
Download product information
Overview
The DI048N04PT-AQ is an automotive-grade N-channel enhancement mode MOSFET manufactured by Diotec Semiconductor. It utilizes silicon technology and is housed in a compact 8-PowerVDFN (3x3 mm) surface-mount package. Key electrical specifications include a drain-source voltage of 40 V, a continuous drain current of 48 A at case temperature, and a maximum power dissipation of 31 W. The device features a low on-resistance of 7.6 mΩ at 10 V gate drive, with a gate charge of 48.5 nC and input capacitance of 2268 pF. It operates within a junction temperature range of -55°C to +150°C and holds AEC-Q101 qualification.
Feature Summary
- Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in vehicle electronics.
- High current density capability enabled by a low thermal resistance PowerVDFN 3x3 package design.
- Low conduction losses achieved through minimized on-resistance optimized for efficient power switching.
- Enhanced mode operation ensures safe default-off states and compatibility with standard logic-level drivers.
Applications
- Wireless charging stations requiring compact high-current power stages
- Automotive electronic control units demanding AEC-Q101 compliance
- DC-DC converter circuits in industrial and mobility applications
Procurement Notes
Verify that the specific part number suffix matches the required automotive qualification status. Confirm the package type corresponds to the 8-PowerVDFN (3x3 mm) footprint during schematic capture. Ensure thermal management designs account for the specified 31 W power dissipation limit at the case temperature. Cross-reference manufacturer documentation for any recent product change notices affecting pinout or material composition.
Selection Notes
Select this component when space constraints necessitate a small QFN package while maintaining high current handling capabilities. The 40 V rating suits low-voltage automotive systems. Compare the 7.6 mΩ on-resistance against alternative packages to balance conduction losses with thermal performance. Verify that the 48 A current rating aligns with the peak load requirements of the target application circuit.
Part Context
This device belongs to Diotec's portfolio of discrete semiconductors designed for modern electronic circuits. It complements other MOSFETs and protection devices offered by the manufacturer. The component supports applications in industrial, energy, and mobility sectors where reliable switching and compact form factors are critical for system integration.
Replacement Considerations
Consult official Diotec documentation for verified substitute part numbers. Do not assume functional equivalence with generic N-channel MOSFETs lacking AEC-Q101 certification. Verify pinout compatibility before substituting components from different manufacturers.
