DI050N06D1-AQ

$0.99

Description：MOSFET DPAK N 60V 50A 0.0085OHM
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e510439f7ef2 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET DPAK N 60V 50A 0.0085OHM
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：65 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：825 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：42W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DI050N06D1-AQ

Overview

The DI050N06D1-AQ is an N-Channel Power MOSFET in a TO-252AA (D-PACK) package. It features a Drain-Source voltage of 65 V, continuous drain current of 50 A at 25°C case temperature, and maximum power dissipation of 42 W. The device has a low on-state resistance of less than 11 mΩ at VGS = 10 V. It operates within a junction temperature range of -55°C to +150°C and includes avalanche energy ratings of 36 mJ.

Feature Summary

Advanced Trench Technology for optimized performance
Logic Level Gate Drive capability
Low on-state resistance and gate charge
Fast switching times with avalanche rating

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix '-AQ' confirms AEC-Q101 qualification status as documented in official Diotec Semiconductor datasheets. Ensure that the TO-252AA package dimensions and MSL 3 moisture sensitivity level requirements are compatible with your assembly process specifications before finalizing procurement orders.

Selection Notes

Select this component when high continuous current handling near 50 A and low conduction losses below 11 mΩ are required. The logic-level gate drive simplifies control circuit design. Consider the thermal management needs for maintaining the 42 W dissipation limit and the 150°C maximum junction temperature during operation.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for commercial and industrial applications. The standard version is available without automotive qualification, while the '-AQ' suffix denotes compliance with AEC-Q101 standards for automotive environments.

Replacement Considerations

Check for other DI050N06D1 variants or similar TO-252AA N-channel MOSFETs from Diotec with matching electrical parameters if exact availability is constrained.