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The DI052N04PQ2-AQ is a dual N-Channel Power MOSFET manufactured by Diotec Semiconductor. It features a QFN5x6 package with an ID of 52 A at 25°C and a maximum RDS(on) of 4.7 mΩ at VGS = 10 V. The device supports a VDSS of 40 V, PD of 25 W, and Tjmax of 150°C. It includes avalanche ratings with EAS of 123.5 mJ. The -AQ suffix indicates the component is in AEC-Q101 qualification.
Verify the specific AEC-Q101 status for the -AQ suffix, as it denotes qualification rather than full compliance. Confirm RoHS exemption details (exemp. 7a-I) and REACH conflict minerals declarations during sourcing. Ensure thermal management meets the specified RthC and RthA limits for the target application environment.
Select this component for applications requiring low on-state resistance and fast switching times in a compact form factor. Consider the 4.7 mΩ RDS(on) limit at VGS = 10 V for efficiency calculations. Evaluate the 123.5 mJ single pulse avalanche energy rating if inductive load switching is present. Verify compatibility with logic level gate drive requirements.
This part belongs to Diotec's Dual N-Channel Power MOSFET series. It shares the QFN5x6 footprint with other variants but offers distinct electrical characteristics tailored for synchronous rectification and power conversion. The dual configuration allows for efficient half-bridge or full-bridge topologies within a minimal board area.
Check for direct pin-compatible alternatives within the same manufacturer's lineup that match the 40V, 52A specifications. Verify equivalent RDS(on) and thermal resistance values when substituting. Ensure any replacement also meets the required AEC-Q101 qualification status if automotive reliability is mandated.