DI054N10D1

$0.39

Description：DI054N10D1
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:b75a74c069e8 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI054N10D1
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1685 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：47.9W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DI054N10D1

Overview

The DI054N10D1 is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a TO-252AA (D-PACK) package. It features a drain-source voltage of 100 V and a continuous drain current of 54 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 9.5 mΩ at VGS = 10 V and 15 A. Key electrical parameters include a gate-source threshold voltage ranging from 1.5 V to 2.5 V, a total gate charge of 38 nC, and a single pulse avalanche energy rating of 70.5 mJ. The component supports a junction temperature range of -55°C to +150°C with a power dissipation capacity of 47.9 W.

Feature Summary

Logic level gate drive capability for efficient control
Low on-state resistance for reduced conduction losses
Fast switching times with low gate charge
Avalanche rated for robust operation under transient conditions

Applications

Power Factor Correction (PFC)
Uninterruptible Power Supplies (UPS)
Battery Chargers

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard version is commercial/industrial grade. Suffixes -Q and -AQ denote AEC-Q101 compliance or qualification respectively. Confirm that the required automotive reliability standards match the selected suffix before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high efficiency and fast switching within a 100 V system. Ensure thermal management aligns with the specified thermal resistance and power dissipation limits. Consider the -AQ suffix if the design requires automotive-grade reliability standards defined by AEC-Q101.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET family designed for commercial and industrial electronics. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds. The TO-252AA package provides a compact solution suitable for surface mount assembly in space-constrained designs.

Replacement Considerations

Check datasheets for alternative MOSFETs with matching 100 V ratings and comparable RDS(on) values. Verify pinout compatibility with the D-PACK footprint. Automotive replacements must meet AEC-Q101 requirements if the original suffix was -AQ.