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The DI064P04D1-AQ is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-252AA (D-PACK) package. It features an advanced trench technology with a drain-source voltage of -40 V and a continuous drain current of -64 A at 25°C. The device exhibits a low on-state resistance of less than 7.6 mΩ and supports a power dissipation of 48.3 W. It is rated for a junction temperature up to 150°C and includes avalanche energy capability of 221 mJ.
Verify the specific suffix when ordering. The standard DI064P04D1 represents commercial or industrial grade components. The suffix -AQ indicates that the component is qualified to the AEC-Q101 automotive standard. Confirm the required reliability grade matches your application needs before finalizing procurement specifications.
Select this component for high-current switching applications requiring low conduction losses. Ensure thermal management aligns with the specified thermal resistance values. Verify that the gate drive voltage meets the threshold requirements for optimal performance. Consider the avalanche rating if the circuit experiences inductive load switching.
This part belongs to Diotec's lineup of P-Channel Power MOSFETs designed for robust power management solutions. Utilizing advanced trench technology, it offers superior performance compared to traditional planar devices. The D-PACK case provides efficient heat dissipation suitable for medium-power electronics.
Check pinout compatibility and electrical parameters such as RDS(on), VGS(th), and package dimensions against existing designs. Verify thermal characteristics and maximum ratings to ensure equivalent or better performance in the target application.
The -AQ suffix signifies that the DI064P04D1-AQ is qualified according to the AEC-Q101 automotive standard.
Yes, the datasheet specifies a single pulse avalanche energy rating of 221 mJ.