DI065N06PT

$0.28

Description：MOSFET POWERQFN 3X3 N 65V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:bde676614881 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 3X3 N 65V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：65 V
Current - Continuous Drain (Id) @ 25°C：65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1617 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：39W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (3x3)
Package / Case：8-PowerVDFN

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DI065N06PT

Overview

The DI065N06PT is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a QFN3x3 package. It features a drain-source voltage (VDSS) of 65 V and a continuous drain current (ID) of 65 A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of less than 5 mΩ at VGS = 10 V. Key electrical parameters include a maximum power dissipation of 39 W, a peak drain current of 300 A, and a single pulse avalanche energy rating of 65 mJ. The component supports logic level gate drive with a threshold voltage ranging from 1.2 V to 2.5 V.

Feature Summary

Compact QFN3x3 package design for space-constrained applications
Logic level gate drive capability for efficient control
Low on-state resistance for reduced conduction losses
Fast switching times with low gate charge

Applications

Power Management Units
Battery powered devices
Load Switches
Polarity Protection circuits

Procurement Notes

Verify the specific ordering suffix when purchasing. Standard versions are commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm RoHS and REACH compliance requirements match your project specifications before finalizing orders.

Selection Notes

Select this component for high-current applications requiring minimal footprint. Ensure thermal management aligns with the specified junction-to-case thermal resistance. Verify that the operating voltage does not exceed the 65 V breakdown limit. Consider the avalanche energy rating if inductive load switching is present in the circuit design.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup, designed for standard commercial and industrial reliability levels. It utilizes silicon technology within a lead-free, UL 94V-0 compliant case material. The device is supplied in taped and reeled packaging suitable for automated surface mount assembly processes.