DI065N08D1-AQ

$0.47

Description：MOSFET DPAK N 80V 65A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:b3067e8744c2 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET DPAK N 80V 65A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1812 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：62.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DI065N08D1-AQ

Overview

The DI065N08D1-AQ is an N-Channel Power MOSFET in a TO-252AA (D-PACK) package. It features a Drain-Source voltage of 80 V and continuous drain current ratings of 69 A at TC = 25°C and 48 A at TC = 100°C. The device has a maximum on-state resistance of 7 mΩ at VGS = 10 V and 9.5 mΩ at VGS = 4.5 V. Peak drain and source currents reach 300 A. Avalanche energy is rated at 15 mJ for the -AQ variant. Thermal resistance from junction to case is less than 2.4 K/W, with a maximum junction temperature of 175°C.

Feature Summary

Advanced Trench Technology for low on-state resistance
Logic Level Gate Drive capability
Fast switching times with low gate charge
Avalanche rated performance

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify that the specific part number suffix matches the required automotive qualification level. Confirm thermal management requirements align with the specified power dissipation limits at various case temperatures. Ensure the ordering documentation explicitly references the correct RoHS and REACH compliance status as defined by the manufacturer's standard terms.

Selection Notes

Select this component when an 80 V N-Channel MOSFET with high current handling is required. The logic-level gate drive supports direct control from standard microcontrollers or drivers without additional level shifting. Consider the TO-252AA package for applications requiring robust surface-mount heat dissipation capabilities.

Part Context

This component belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup. The -AQ suffix indicates the device is undergoing AEC-Q101 qualification. It utilizes advanced trench technology to achieve low on-state resistance and fast switching characteristics suitable for modern power electronics.