DI065N08D1

$0.39

Description：DI065N08D1
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:161b4f24fe78 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI065N08D1
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1812 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：62.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DI065N08D1

Overview

The DI065N08D1 is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a TO-252AA (D-PACK) package. It features a Drain-Source voltage (VDSS) of 80 V and a continuous Drain current (ID) of 65 A at TC = 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 7 mΩ at VGS = 10 V and ID = 20 A. Maximum power dissipation is rated at 50.4 W at TC = 25°C. The component supports a junction temperature range up to +150°C and includes avalanche energy ratings.

Feature Summary

Advanced Trench Technology for optimized performance
Logic Level Gate Drive capability
Low on-state resistance and gate charge
Fast switching times with avalanche rating

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix requirements against your design needs. The standard version meets commercial and industrial grade standards. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm RoHS and REACH compliance details directly with the manufacturer or authorized distributors before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring high current handling and low conduction losses within an 80 V system. Ensure thermal management aligns with the specified RthJC and RthJA values. Consider the -Q or -AQ variants if automotive reliability standards are required. Verify that the logic level gate drive matches your control circuit voltage levels for optimal switching efficiency.

Part Context

This part belongs to Diotec's discrete semiconductor portfolio, specifically designed as a power MOSFET solution. It utilizes advanced trench technology to achieve low on-state resistance and fast switching characteristics. The component is manufactured by Diotec Semiconductor AG, a provider of standard and customized semiconductor solutions.