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The DI070P04PQ-AQ is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for commercial and industrial applications. It features a low-profile QFN5x6 package with an on-state resistance of less than 6.5 mΩ at VGS = -10V and ID = -20A. The device supports a drain-source voltage of -40V and continuous drain currents up to -70A at 25°C case temperature. It includes avalanche rating capabilities with single pulse energy of 101 mJ and operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix when ordering. The -AQ suffix indicates AEC-Q101 qualified status, while -Q denotes compliance. Confirm package availability as it may be offered in QFN5x6 or TDSON-8 variants depending on the specific order code. Ensure thermal management aligns with the specified RthJC values for your application requirements.
Select this component for high-current P-channel switching applications requiring compact footprints. Consider the -40V rating and low RDS(on) for efficiency in synchronous rectification or motor drive circuits. Evaluate thermal dissipation needs against the 46W power dissipation limit at 25°C case temperature. Verify gate drive compatibility with the threshold voltage specifications.
This part belongs to Diotec's P-Channel Power MOSFET lineup, utilizing advanced trench technology for low on-resistance. It is positioned alongside other automotive-grade components in the DIxxPxx-PQ series. The -AQ designation signifies qualification under automotive reliability standards, distinguishing it from standard commercial grades.
Check for DI070P04PQ without suffixes for non-automotive versions. Compare pinouts and thermal characteristics with other QFN5x6 P-channel MOSFETs from different manufacturers if sourcing alternatives.
The -AQ suffix indicates that the DI070P04PQ-AQ is fully AEC-Q101 qualified.
Yes, the DI070P04PQ-AQ is avalanche rated with a single pulse avalanche energy (EAS) of 101 mJ.