DI072N06PT

Overview

The DI072N06PT is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a QFN3x3 surface-mount package. It features a drain-source breakdown voltage (VDSS) of 65 V and a continuous drain current (ID) of 72 A at 25°C case temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 4.8 mΩ at VGS = 10 V and ID = 20 A. Key electrical parameters include a gate-source threshold voltage ranging from 1.2 V to 2.5 V, a total gate charge of 35 nC, and a power dissipation rating of 43 W at 25°C. The junction temperature range spans from -55°C to +150°C.

Feature Summary

• Logic level gate drive capability for efficient control
• Low on-state resistance for reduced conduction losses
• Fast switching times with low gate charge
• Compact QFN3x3 package design

Applications

• Power Management Units
• Battery powered devices
• Load Switches
• Polarity Protection circuits

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard DI072N06PT is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm these distinctions match your reliability requirements before procurement.

Selection Notes

Select this component for applications requiring high current handling in a minimal footprint. The logic-level gate drive simplifies driver circuit design. Ensure thermal management accounts for the specified RthJA values under steady-state conditions to maintain safe operating temperatures.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for modern electronics. It utilizes silicon technology and complies with RoHS directives without exemptions. The device is supplied in taped and reeled packaging suitable for automated assembly processes.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.