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Product Detailed Parameters
- Description：MOSFET DPAK P -60V -77A
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：13.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：62.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5505 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：110W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DI077P06D1 is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-252AA (D-PACK) surface-mount package. It features a drain-source voltage rating of -60 V and a continuous drain current of -77 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 13.5 mΩ at VGS = -4.5 V and ID = 20 A. Key electrical parameters include a gate-source threshold voltage ranging from 1.3 V to 2.6 V, a total gate charge of 62.1 nC, and a power dissipation capacity of 150 W. The component supports an avalanche energy rating of 722 mJ and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Space-saving D-PACK package design for efficient board layout
- Logic level gate drive capability for direct interface with standard logic circuits
- Low on-state resistance to minimize conduction losses
- Avalanche rated performance for robust transient handling
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
- Synchronous Rectifiers
Procurement Notes
Verify the specific ordering suffix when purchasing. The base model DI077P06D1 represents the commercial/industrial grade. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes qualification status. Confirm that the required automotive or industrial reliability grade matches the project specifications before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high current handling in a compact form factor. The low RDS(on) and logic-level gate drive make it suitable for synchronous rectification and motor control. Ensure thermal management meets the 1.0 K/W junction-to-case requirement. Verify that the operating voltage does not exceed the -60 V limit and that the gate drive signal aligns with the specified threshold characteristics.
Part Context
This part belongs to the DI0XX series of P-Channel MOSFETs produced by Diotec Semiconductor. The manufacturer specializes in discrete semiconductors including diodes, transistors, and MOSFETs. The DI077P06D1 utilizes a TO-252AA case outline, which is a standard surface-mount package designed for power applications requiring reliable thermal performance and mechanical stability.
Replacement Considerations
Check for alternative part numbers with matching pinouts and electrical ratings if supply constraints exist. Verify that any substitute maintains the same TO-252AA footprint and meets the -60 V / -77 A requirements.
