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The DI0A35N06PGK-AQ is an N-Channel Power MOSFET in a SOT-883 (~DFN1006-3) package. It features a drain-source voltage (VDSS) of 60 V and continuous drain current (ID) of 350 mA at 25°C. The device has a maximum power dissipation (PD) of 223 mW and operates within a junction temperature range of -55 to +150°C. The on-state resistance (RDS(on)) is less than 1.4 Ω at VGS = 10 V. This variant carries the -AQ suffix, indicating AEC-Q101 qualification for automotive applications.
Verify that the specific ordering code includes the -AQ suffix to ensure AEC-Q101 qualification status. Confirm package type matches SOT-883 requirements. Check RoHS compliance documentation. Ensure storage conditions remain within specified limits. Validate supplier authenticity through official Diotec channels.
Select this component for compact designs requiring 60 V blocking capability. Suitable for low-current switching tasks under 350 mA. Consider thermal constraints due to small footprint. Verify gate drive compatibility with low gate charge characteristics. Ensure application meets commercial or industrial grade reliability needs.
This part belongs to Diotec's N-Channel Power MOSFET lineup designed for space-constrained electronics. The DFN1006-3 form factor enables high-density PCB layouts. Automotive qualification expands potential use cases into vehicle electronics where reliability standards are stringent.
Check for direct substitutes with identical pinout and electrical ratings. Verify package compatibility before substitution. Confirm thermal performance matches original specifications. Review manufacturer recommendations for cross-references.