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The DI0A35N06PGK is an N-Channel Power MOSFET in a SOT-883 (DFN1006-3) package. It features a drain-source voltage of 60 V and a continuous drain current of 350 mA at 25°C. The on-state resistance is less than 1.4 Ω at VGS=10V. Maximum power dissipation is 223 mW, with a junction temperature range of -55 to +150°C. Dynamic characteristics include a total gate charge of 1.9 nC and turn-on delay of 3.8 ns.
Verify the specific suffix when ordering. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm these designations match project requirements before procurement.
Select this component for applications requiring compact size and low power handling. Ensure the 60 V rating and 350 mA current limit suit the circuit. Consider thermal resistance of 560 K/W for heat management. Verify if automotive grades are needed for specific reliability standards.
This part belongs to Diotec Semiconductor's lineup of small-signal MOSFETs designed for portable electronics. It serves as a compact alternative to larger packages like SOT-23 or SOT-323 where board space is limited. The DFN1006-3 form factor supports automated surface-mount assembly processes.
The maximum operating junction temperature is +150°C.
Standard versions are commercial/industrial grade. Versions with suffix -Q are AEC-Q101 compliant, and -AQ are qualified.