DI0A35N06PGK

DI0A35N06PGK

$0.03
  • Description:DI0A35N06PGK
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk

SKU:a41bd57589e6 Category: Brand:

  
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Product Detailed Parameters

  • Description:DI0A35N06PGK
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:350mA
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
  • Rds On (Max) @ Id, Vgs:1.4Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.9 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:32 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):223mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:DFN1006-3
  • Package / Case:SC-101, SOT-883

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DI0A35N06PGK

Overview

The DI0A35N06PGK is an N-Channel Power MOSFET in a SOT-883 (DFN1006-3) package. It features a drain-source voltage of 60 V and a continuous drain current of 350 mA at 25°C. The on-state resistance is less than 1.4 Ω at VGS=10V. Maximum power dissipation is 223 mW, with a junction temperature range of -55 to +150°C. Dynamic characteristics include a total gate charge of 1.9 nC and turn-on delay of 3.8 ns.

Feature Summary

  • Tiny, space-saving package with low profile height
  • Low on-state resistance for efficient conduction
  • Fast switching times with low gate charge
  • Compliant to RoHS, REACH, and Conflict Minerals regulations

Applications

  • Power Management Units
  • Battery powered devices
  • Load Switches
  • Polarity Protection

Procurement Notes

Verify the specific suffix when ordering. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm these designations match project requirements before procurement.

Selection Notes

Select this component for applications requiring compact size and low power handling. Ensure the 60 V rating and 350 mA current limit suit the circuit. Consider thermal resistance of 560 K/W for heat management. Verify if automotive grades are needed for specific reliability standards.

Part Context

This part belongs to Diotec Semiconductor's lineup of small-signal MOSFETs designed for portable electronics. It serves as a compact alternative to larger packages like SOT-23 or SOT-323 where board space is limited. The DFN1006-3 form factor supports automated surface-mount assembly processes.

FAQ

What is the maximum junction temperature?

The maximum operating junction temperature is +150°C.

Does this component support automotive applications?

Standard versions are commercial/industrial grade. Versions with suffix -Q are AEC-Q101 compliant, and -AQ are qualified.

DI0A35N06PGKDI0A35N06PGK
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