DI100N10PQ

$1.95

Description：MOSFET PWRQFN 5X6 100V 0.0045OHM
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3271f527192a Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET PWRQFN 5X6 100V 0.0045OHM
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3400 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：250W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (5x6)
Package / Case：8-PowerTDFN

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DI100N10PQ

Overview

The DI100N10PQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 package. It features a drain-source voltage (VDSS) of 100 V and a continuous drain current (ID) of 80 A at TC = 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 4.5 mΩ at VGS = 10 V and ID = 50 A. It supports a maximum junction temperature (Tjmax) of 175°C and offers a single pulse avalanche energy rating of 144 mJ.

Feature Summary

Logic-level gate drive capability for efficient control
Low on-state resistance to minimize conduction losses
Fast switching times with low gate charge
Avalanche rated for robust operation under transient conditions

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix when ordering. The standard version is commercial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes full qualification. Confirm RoHS and REACH status as required by your manufacturing standards. Ensure thermal management aligns with the specified power dissipation limits.

Selection Notes

Select this component for high-current applications requiring low RDS(on) and fast switching. Consider the QFN5x6 package for space-constrained designs. Evaluate thermal resistance requirements against your heat sink capabilities. Verify that the logic-level gate drive matches your controller's output voltage levels.

Part Context

This part belongs to Diotec's DIxxNxx-PQ series of N-Channel Power MOSFETs. These devices are designed for commercial and industrial use, offering a balance of performance and reliability. The series utilizes advanced trench technology to achieve low on-resistance and fast switching speeds within a small footprint.

Replacement Considerations

Check pinout compatibility and electrical parameters such as VDSS, ID, and RDS(on). Verify package dimensions match the QFN5x6 form factor. Ensure thermal characteristics and avalanche ratings meet or exceed original design requirements.

FAQ

What is the maximum junction temperature?

The maximum junction temperature is 175°C.

Is the DI100N10PQ suitable for automotive applications?

Standard versions are for commercial/industrial use. Versions with suffix -Q are AEC-Q101 compliant, and -AQ are qualified for automotive applications.