DI110N03PQ-AQ

$0.45

Description：MOSFET POWERQFN 5X6 N 30V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:7e426841e42f Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 5X6 N 30V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.65mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1860 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：35W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (5x6)
Package / Case：8-PowerTDFN

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DI110N03PQ-AQ

Overview

The DI110N03PQ-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 (TDSON-8/DFN5060) package. It features a drain-source voltage of 30 V and a continuous drain current of 110 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 2.5 mΩ and supports a peak drain current of 420 A. With a power dissipation rating of 35 W and a junction temperature range of -55°C to +150°C, it includes avalanche energy capability of 151 mJ. The suffix -AQ indicates the component is undergoing AEC-Q101 qualification.

Feature Summary

Low profile, space-saving package design
Low on-state resistance for efficient conduction
Fast switching times with low gate charge
Avalanche rated for robust operation

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix status before procurement. The -AQ suffix denotes that the part is currently in the AEC-Q101 qualification process rather than fully certified. Confirm final automotive compliance requirements with the manufacturer or authorized distributors prior to integration into qualified automotive systems.

Selection Notes

Select this component for applications requiring high current handling in a small footprint. The 30V rating suits low-voltage DC systems. Ensure thermal management accounts for the 35W dissipation limit. Verify that the logic-level gate drive characteristics align with the system's control voltage requirements for optimal switching performance.

Part Context

This device belongs to Diotec's N-Channel Power MOSFET lineup designed for commercial and industrial use. It utilizes advanced trench technology to achieve low RDS(on) within the QFN5x6 form factor. The product line targets efficiency improvements in portable and stationary power electronics through reduced conduction losses.