DI110N04PQ

$0.28

Description：MOSFET POWERQFN 5X6 N 40V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:aa12f969849f Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 5X6 N 40V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.5mOhm @ 23A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2980 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：55.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (5x6)
Package / Case：8-PowerTDFN

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DI110N04PQ

Overview

The DI110N04PQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 (TDSON-8 / DFN5060) package. It features a 40V drain-source breakdown voltage and supports continuous drain currents of up to 110A at TC=25°C or 70A at TC=100°C. The device exhibits a low on-state resistance of typically 1.9mΩ at VGS=10V and 2.9mΩ at VGS=4.5V. With a maximum junction temperature rating of 175°C and avalanche energy capability of 123.5mJ, it is designed for robust power switching applications.

Feature Summary

Low profile, space-saving QFN5x6 package design
Fast switching times with low gate charge
Rated for single pulse avalanche energy
Compliant with RoHS, REACH, and Conflict Minerals standards

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify the specific ordering suffix when purchasing. The base model DI110N04PQ represents the commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm the required automotive standard matches the exact part number requested to ensure proper reliability grading for the target application environment.

Selection Notes

Select this component for designs requiring high current handling within a small footprint. The logic-level gate drive threshold allows efficient control. Ensure thermal management accounts for the 2.7 K/W junction-to-case thermal resistance. Verify that the operating case temperature remains within limits to sustain the rated 110A or 70A continuous drain current without exceeding the 175°C maximum junction temperature.

Part Context

This device belongs to the DIxxNxx-PQ series of N-Channel Power MOSFETs by Diotec Semiconductor. These components utilize advanced trench technology to achieve low on-state resistance and fast switching speeds. They are engineered for commercial and industrial use, with specific variants offering automotive-grade reliability certifications.