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Product Detailed Parameters
- Description：MOSFET, D2PAK, 60V, 110A, 150C,
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4597 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：62.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263AB
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The DI110N06D2 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-263AB (D2PAK) package. It features a drain-source voltage rating of 60 V and a continuous drain current of 110 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 3.2 mΩ at VGS = 10 V and ID = 100 A. Thermal performance includes a junction-to-case thermal resistance below 2 K/W and a maximum junction temperature of 150°C. Dynamic characteristics include a total gate charge of 75 nC and avalanche energy capability of 100.3 mJ.
Feature Summary
- Advanced Trench Technology for low on-state resistance
- Avalanche rated with high single-pulse energy capability
- Standard Level Gate Drive optimized for commercial applications
- Fast switching times with low gate charge
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Synchronous Rectifiers
Procurement Notes
Verify the specific suffix when ordering to confirm compliance status. The standard version is commercial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification in progress. Confirm RoHS exemption details if required. Ensure sourcing from authorized channels to validate datasheet accuracy and component authenticity.
Selection Notes
Select this component for high-current DC conversion where low conduction loss is critical. The 60V rating suits 48V bus systems. Evaluate thermal management requirements given the 62.5W dissipation limit. Consider the avalanche rating for inductive load protection. Verify gate drive compatibility with the specified threshold voltage range.
Part Context
This part belongs to Diotec's N-Channel Power MOSFET lineup designed for power electronics. It utilizes advanced trench technology to achieve low RDS(on). The D2PAK package facilitates surface mount assembly with efficient heat dissipation through the exposed pad. It serves as a core switching element in modern electronic circuits requiring robust current handling.
Replacement Considerations
Check pinout compatibility and package dimensions against alternatives. Compare RDS(on), VGS(th), and Qg values for circuit performance parity. Verify thermal resistance ratings match existing heatsinking designs. Ensure voltage and current margins are maintained or exceeded by any substitute component.
