DI1A0N60D1-AQ

$0.12

Description：DI1A0N60D1-AQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:875e50f8e174 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI1A0N60D1-AQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：8.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.3 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：121 pF @ 300 V
FET Feature：-
Power Dissipation (Max)：25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DI1A0N60D1-AQ

Overview

The DI1A0N60D1 is an N-Channel Power MOSFET from Diotec Semiconductor, utilizing Advanced Trench Technology. It features a Drain-Source voltage (VDSS) of 600 V and a continuous Drain current (ID) of 1.0 A at TC = 25°C. The device has a maximum on-state resistance (RDS(on)) of 8.4 Ω at VGS = 10 V and ID = 0.5 A. It supports a single pulse avalanche energy (EAS) of 43.5 mJ and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Advanced Trench Technology for low on-state resistance
Fast switching times with avalanche rated capability
Compliant with RoHS, REACH, and Conflict Minerals regulations

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix when ordering. The standard version is DI1A0N60D1. The suffix -Q indicates AEC-Q101 compliance, while -AQ denotes parts in AEC-Q101 qualification. Confirm these designations match your project's automotive or commercial reliability requirements before finalizing procurement.

Selection Notes

Select this component for applications requiring high-voltage handling up to 600 V with moderate current capacity. The TO-252AA package provides efficient thermal dissipation. Ensure gate drive voltages align with the specified threshold characteristics. Consider the avalanche rating if inductive load switching is present in the circuit design.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for commercial and industrial grade usage. It utilizes silicon technology housed in a TO-252AA (D-Pak) case. The product line emphasizes robust performance in power conversion environments through optimized trench architecture.