DI1A5N60D1

$0.14

Description：MOSFET DPAK N 600V 1.5A 8OHM
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:6af3456fff6e Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET DPAK N 600V 1.5A 8OHM
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：8Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.9 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：156 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DI1A5N60D1

Overview

The DI1A5N60D1 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-252AA (D-PACK) package. It features a drain-source voltage of 600 V and a continuous drain current of 1.5 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 8 Ω at VGS = 10 V. Key electrical parameters include a gate-source threshold voltage ranging from 2 V to 4 V, a total gate charge of 7.9 nC, and a power dissipation capacity of 25 W at 25°C. The component supports a single pulse avalanche energy of 30 mJ and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Advanced Trench Technology for low on-state resistance
Fast switching times suitable for high-frequency applications
Avalanche rated capability for robust operation
Compliant with RoHS, REACH, and Conflict Minerals regulations

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm these designations match project requirements before procurement. Ensure the datasheet version matches the manufacturing batch specifications.

Selection Notes

Select this component for circuits requiring 600 V blocking capability with moderate current handling up to 1.5 A. The 8 Ω maximum RDS(on) impacts conduction losses; verify thermal management strategies accordingly. Consider the 7.9 nC gate charge for driver selection. The TO-252AA package requires appropriate PCB copper pad sizing for optimal heat dissipation.

Part Context

This part belongs to Diotec's discrete semiconductor portfolio, specifically the N-Channel Power MOSFET category. It utilizes advanced trench technology to achieve performance metrics suitable for general-purpose power switching. The product line includes variants with different automotive qualifications indicated by suffixes.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter margins if considering alternative manufacturers.

FAQ

What is the maximum single pulse avalanche energy?

The DI1A5N60D1 supports a single pulse avalanche energy of 30 mJ under specified test conditions.

How does the suffix affect the component?

The suffix -Q indicates AEC-Q101 compliance, while -AQ indicates the component is in AEC-Q101 qualification. Standard versions are commercial/industrial grade.