DI200N04PQ

$2.06

Description：MOSFET PWRQFN 5X6 40V 0.0013OHM
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:13935e6807ed Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET PWRQFN 5X6 40V 0.0013OHM
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：92 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5768 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：180W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (5x6)
Package / Case：8-PowerTDFN

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DI200N04PQ

Overview

The DI200N04PQ is a single N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 (TDSON-8 / DFN5060) surface-mount package. It features a drain-source breakdown voltage of 40 V and supports a continuous drain current of 200 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 1.3 mΩ and a power dissipation rating of 180 W. Key electrical parameters include a gate-source threshold voltage ranging from 2.0 V to 4.0 V, a total gate charge of 92 nC, and a peak avalanche energy capability of 1800 mJ. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Low profile, space-saving package design
Standard level gate driver compatibility
Low on-state resistance for efficient conduction
Fast switching times with low gate charge
Avalanche rated for robust operation

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix when ordering. The standard DI200N04PQ designation refers to commercial or industrial grade components. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes full AEC-Q101 qualification. Confirm that the required automotive reliability standards match the selected suffix before procurement to ensure proper application suitability.

Selection Notes

Select this component for high-current applications requiring low thermal resistance and fast switching speeds. The 40V rating and 200A continuous current capacity make it suitable for heavy-duty power conversion. Ensure adequate heatsinking is provided, as the 180W power dissipation rating is measured at the heat flange. Consider the 1.3mΩ maximum RDS(on) for minimizing conduction losses in synchronous rectification or motor drive circuits.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for high-efficiency power management. It utilizes advanced trench technology to achieve low on-resistance within a small footprint. The QFN5x6 package facilitates efficient thermal transfer to the PCB copper area. It serves as a high-performance alternative to traditional through-hole packages in modern compact electronic designs.