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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 2.8A 6QFN
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2.8A (Ta)
- Rds On (Max) @ Id, Vgs：72mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：387pF @ 15V
- Power - Max：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：6-QFN (2x2)
- Grade：-
- Qualification：-
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Overview
The DI2A8N03PWK2 is a dual N-channel power MOSFET manufactured by Diotec Semiconductor in a compact PowerQFN 2x2 package. It features a drain-source voltage (VDSS) of 30 V and a continuous drain current (ID) of 2.8 A at 25°C, with a peak drain current (IDM) of 12 A. The maximum on-state resistance (RDS(on)) is 72 mΩ at VGS = 4.5 V and 102 mΩ at VGS = 2.5 V. Total gate charge (Qg) is 6.8 nC at VGS = 4.5 V. Power dissipation is rated at 1.4 W, with a junction temperature range of -55°C to +150°C.
Feature Summary
- Dual MOSFET configuration with integrated protected gate diodes
- Low profile height and space-saving PowerQFN 2x2 package design
- Fast switching times combined with low gate charge for efficient operation
- Compliant with RoHS directives and REACH regulations
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Synchronous Rectifiers
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard version is commercial grade. Suffixes -Q indicate AEC-Q101 compliance, while -AQ indicates AEC-Q101 qualification. Confirm these details against official distributor listings or manufacturer documentation before finalizing orders to ensure correct automotive or industrial grading.
Selection Notes
Select this component for applications requiring a dual N-channel MOSFET in a minimal footprint. Ensure the required RDS(on) meets circuit efficiency targets at the intended gate drive voltage. Verify that the 30 V breakdown voltage provides adequate margin for the system's operating conditions and transient spikes.
Part Context
This device belongs to Diotec Semiconductor's discrete semiconductor portfolio, specifically within their MOSFET category. It is designed for commercial and industrial grade applications, offering a balance of performance and size suitable for modern electronics where board space is limited.
Replacement Considerations
Check for compatible dual N-channel MOSFETs in the PowerQFN 2x2 package with similar VDSS and RDS(on) specifications. Verify pinout compatibility and thermal characteristics before substituting.
