DI3A5C03SQK

$0.18

Description：DI3A5C03SQK
Series：*

SKU:64d608e66daf Category: FET, MOSFET Arrays Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI3A5C03SQK
Series：*
Mfr：Diotec Semiconductor
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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DI3A5C03SQK

Overview

The DI3A5C03SQK is a dual N+P channel power MOSFET in an SO-8 package. The N-channel features a 30 V drain-source voltage (VDSS) and 3.5 A continuous drain current (ID), with an on-state resistance (RDS(on)) under 98 mΩ at VGS=10V. The P-channel provides matching -30 V VDSS and -3.5 A ID, also maintaining RDS(on) below 98 mΩ at VGS=-10V. Both channels operate within a junction temperature range of -55°C to +150°C. Total gate charge is 12.5 nC for the N-channel and 4.2 nC for the P-channel at VGS=5V.

Feature Summary

Complementary N and P channel configuration integrated into a single compact component
Low profile surface-mount packaging designed for space-constrained applications
Optimized low on-state resistance and fast switching characteristics for efficient power management

Applications

Power Management Units
MOSFET & IGBT driver circuits
Class-D audio amplifiers

Procurement Notes

Verify the specific suffix when ordering. The standard version is commercial/industrial grade. The -Q suffix indicates AEC-Q101 compliance, while -AQ denotes parts currently undergoing automotive qualification. Confirm the required reliability grade matches your application needs before finalizing procurement.

Selection Notes

Select this component for designs requiring complementary high-side and low-side switching in a small footprint. Ensure the driving circuit can supply sufficient gate voltage to achieve the specified low RDS(on). Verify thermal dissipation requirements against the 2.0 W power rating mounted on a standard PCB pad.

Part Context

This device belongs to Diotec Semiconductor's portfolio of dual power MOSFETs. It serves as a monolithic solution for bridge drivers and push-pull stages, replacing discrete N and P-channel pairs to reduce board space and simplify assembly processes.