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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 7.6A 8SO
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：7.6A (Tc)
- Rds On (Max) @ Id, Vgs：28mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：870pF @ 20V
- Power - Max：3.1W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DI7A6N04SQ2 is a dual N-channel power MOSFET in an SO-8 package. It features a drain-source voltage (VDSS) of 40 V and a continuous drain current (ID) of 7.6 A at 25°C. The on-state resistance (RDS(on)) is typically 21 mΩ at VGS=10V/ID=7A, and up to 32 mΩ at VGS=5V/ID=5A. Total gate charge (Qg) is 18 nC. The device supports a maximum junction temperature of 150°C and includes an integrated body diode with a reverse recovery time of 45 ns.
Feature Summary
- Dual MOSFET configuration within a single low-profile package
- Logic level drive capability for efficient control
- Low on-state resistance and fast switching times
- Compliant with RoHS, REACH, and Conflict Minerals regulations
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Synchronous Rectifiers
Procurement Notes
Verify the specific ordering suffix when purchasing. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm that the component matches the commercial or industrial grade requirements for your design. Ensure the datasheet version aligns with the manufacturing batch to validate thermal and electrical specifications.
Selection Notes
Select this component for applications requiring a compact dual N-channel solution with a 40V rating. The logic-level drive allows direct interfacing with standard microcontrollers. Evaluate the thermal resistance values against your PCB copper pad area, as the specified ratings assume a 625 mm² drain terminal pad. Consider the low gate charge for high-frequency switching efficiency.
Part Context
This part belongs to Diotec Semiconductor's dual N-channel MOSFET family. It utilizes an SO-8 case material rated UL 94V-0. The device is designed for commercial and industrial grade applications, offering a space-saving alternative to discrete single MOSFETs. It is supplied in tape and reel packaging.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters such as VDSS, ID, and RDS(on) before considering any cross-brand alternatives.
