DI8A6C03SQ

$0.18

Description：DI8A6C03SQ
Series：*

SKU:f4d9cc2ea768 Category: FET, MOSFET Arrays Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI8A6C03SQ
Series：*
Mfr：Diotec Semiconductor
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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DI8A6C03SQ

Overview

The DI8A6C03SQ is a complementary N+P channel power MOSFET in an SO-8 package. The N-channel Q1 provides a drain-source voltage of 30 V, continuous current of 8.6 A, and on-resistance under 17 mΩ. The P-channel Q2 offers -30 V breakdown, -7.3 A current, and resistance below 20.5 mΩ. Both channels operate within a junction temperature range of -55°C to +150°C with a total power dissipation of 1.6 W.

Feature Summary

Complementary N+P configuration for space-saving designs
Low on-state resistance for efficient power handling
Fast switching times with low gate charge
RoHS compliant without exemptions

Applications

Power management units
Battery powered devices
Load switches
Polarity protection circuits

Procurement Notes

Verify the specific suffix when ordering. The standard DI8A6C03SQ is commercial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm these designations match project requirements before procurement.

Selection Notes

Select this component for applications requiring dual-channel control in a compact surface-mount footprint. Ensure thermal management accommodates the 1.6 W dissipation limit. Verify that the 30 V rating aligns with system voltage peaks.

Part Context

This part belongs to Diotec's complementary MOSFET portfolio. It utilizes silicon technology optimized for low profile height and high reliability in industrial and commercial environments.