DIF120SIC028

$26.21

Description：SIC MOSFET, TO-247-4L, N, 118A,
Series：-
Mfr：Diotec Semiconductor
Package：Tube

SKU:b30dc2488aa6 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：SIC MOSFET, TO-247-4L, N, 118A,
Series：-
Mfr：Diotec Semiconductor
Package：Tube
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：118A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：28mOhm @ 80A, 20V
Vgs(th) (Max) @ Id：4V @ 25mA
Gate Charge (Qg) (Max) @ Vgs：373 nC @ 20 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：5691 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：715W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

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DIF120SIC028

Overview

The DIF120SIC028 is a Silicon Carbide (SiC) MOSFET manufactured by Diotec Semiconductor, housed in a TO-247-4L package. It features an advanced planar technology with a drain-source breakdown voltage of 1200 V and a maximum continuous drain current of 109 A at 25°C case temperature. The device exhibits a low on-state resistance of typically 20 mΩ at 25°C and 30 mΩ at 175°C. With a power dissipation rating of 469 W and a junction temperature range from -55°C to +175°C, it supports high-efficiency switching applications.

Feature Summary

Advanced planar technology for low on-state resistance
Fast switching times with low gate charge
Avalanche rated and 100% avalanche tested
Compliant with RoHS, REACH, and Conflict Minerals standards

Applications

DC/DC Converters
Power Supplies
DC Drives
Charging Stations
Inverters

Procurement Notes

Verify the specific suffix when ordering. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm thermal management requirements as ratings are based on heat flange measurements. Ensure compatibility with TO-247-4L footprints including the Kelvin source connection.

Selection Notes

Select this component for high-voltage applications requiring low conduction losses and fast switching speeds. The TO-247-4L package provides a dedicated Kelvin source pin for improved switching performance. Consider the thermal resistance characteristics and derating curves for operation above 25°C case temperature. Verify that the avalanche capability meets the circuit's transient energy requirements.

Part Context

This part belongs to Diotec's Silicon Carbide MOSFET series designed for modern power electronics. The DIF series utilizes TO-247-4L packaging with a Kelvin source to minimize switching losses. These devices target industrial and automotive sectors, offering superior performance over traditional silicon MOSFETs in terms of efficiency and thermal stability.

Replacement Considerations

Cross-reference with other SiC MOSFETs in the 1200V class having similar RDS(on) and package dimensions. Verify pinout compatibility, specifically the four-terminal configuration. Check if alternative parts meet the same avalanche testing and AEC-Q101 requirements if applicable.