DIT015N25

$0.70

Description：DIT015N25
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:8fc54c507a63 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIT015N25
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：70mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1600 pF @ 125 V
FET Feature：-
Power Dissipation (Max)：45W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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DIT015N25

Overview

The DIT015N25 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-220AB package. It features a drain-source voltage (VDSS) of 250 V and a continuous drain current (ID) of 15 A at 25°C case temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 70 mΩ at VGS = 10 V and ID = 20 A. Key electrical parameters include a gate-source threshold voltage ranging from 2.5 V to 4.5 V, a total gate charge of 24 nC, and a single pulse avalanche energy rating of 320 mJ. Thermal characteristics specify a junction-to-case thermal resistance of 3.3 K/W, with an operating junction temperature range of -55°C to +175°C.

Feature Summary

Advanced Trench Technology for low on-state resistance
Avalanche rated capability for robust operation
Fast switching times with low gate charge
Compliant with RoHS, REACH, and Conflict Minerals regulations

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools

Procurement Notes

Verify the specific ordering suffix when procuring the DIT015N25. Standard commercial grade parts lack automotive certifications. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm that the required reliability grade matches the intended application environment before finalizing orders.

Selection Notes

Select the DIT015N25 for applications requiring high voltage blocking up to 250 V and moderate current handling. The TO-220AB package facilitates effective heat dissipation via the heat flange. Ensure adequate thermal management to maintain junction temperatures within the specified limits during continuous operation at elevated currents.

Part Context

This component belongs to Diotec Semiconductor's discrete power MOSFET portfolio. It utilizes advanced trench technology to achieve low conduction losses and fast switching speeds. The device is designed for standard commercial and industrial environments, providing a reliable solution for power switching tasks where high voltage tolerance is essential.