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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DIT050N06 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for commercial and industrial applications. It features a TO-220AB package with a drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 50 A at 25°C. The device exhibits a typical on-state resistance (RDS(on)) of 14 mΩ and supports a power dissipation (PD) of 85 W. Key electrical parameters include a gate-source voltage (VGSS) of ±20 V, a threshold voltage (VGS(th)) ranging from 1.4 V to 2.5 V, and a total gate charge (Qg) of 50 nC. Thermal characteristics specify a junction-to-case thermal resistance (RthJC) of 1.7 K/W, with an operating temperature range of -55°C to +175°C.
Verify the specific ordering suffix and packaging configuration before procurement, as standard versions are packed in tubes or cardboards. Confirm that the component meets the required commercial grade reliability standards, as it is not designated for automotive qualification. Ensure the design accounts for the specified thermal resistance and maximum junction temperature limits during operation.
Select this component for circuits requiring high current handling up to 50 A with low conduction losses. The 60 V rating suits low-voltage DC systems. Evaluate the thermal management requirements based on the 1.7 K/W junction-to-case resistance. Consider the avalanche energy rating if inductive load switching is present. Verify compatibility with the TO-220AB footprint and soldering conditions.
This part belongs to Diotec Semiconductor's discrete semiconductor portfolio, specifically within the MOSFET category. It utilizes advanced trench technology to achieve performance metrics suitable for general-purpose power switching. The manufacturer emphasizes compliance with environmental directives such as RoHS and REACH for this commercial-grade product line.
Public confirmed substitute part numbers are not available in the provided documentation.