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Product Detailed Parameters
- Description：MOSFET TO-220AB N 100V 85A
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3742 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：62.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The DIT085N10-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, utilizing Advanced Trench Technology. It features a 100 V drain-source voltage (VDSS) and a continuous drain current of 85 A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of less than 4.8 mΩ at VGS = 10 V. Rated for a power dissipation of 62.5 W and a junction temperature up to 150°C, it includes avalanche energy capability of 144 mJ. The component is housed in a TO-220AB package.
Feature Summary
- Advanced Trench Technology for optimized performance
- Low on-state resistance and fast switching times
- Avalanche rated with low gate charge
- Compliant with RoHS, REACH, and Conflict Minerals regulations
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
Procurement Notes
Verify the specific suffix requirements against your design specifications. The -AQ suffix indicates the component is undergoing AEC-Q101 qualification processes. Confirm that the TO-220AB package dimensions align with your thermal management and PCB layout constraints before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high current handling and low conduction losses. Ensure the operating environment supports the specified thermal characteristics. Consider the avalanche rating for inductive load protection. Verify that the gate drive voltage meets the threshold requirements for optimal RDS(on) performance.
Part Context
This part belongs to Diotec's N-Channel Power MOSFET lineup designed for commercial and industrial grade applications. The product line emphasizes efficiency through low on-state resistance and fast switching capabilities. The -AQ designation specifically relates to automotive qualification standards, distinguishing it from standard commercial variants.
Replacement Considerations
Consult official Diotec documentation for confirmed substitute part numbers. Cross-referencing parameters such as VDSS, ID, and RDS(on) is essential when evaluating alternative components for this application.
