DIW052N60K

$5.24

Description：DIW052N60K
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:865432572ef7 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIW052N60K
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：55mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

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DIW052N60K

Overview

The DIW052N60K is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for high-power applications. It features a Drain-Source voltage (VDSS) of 600 V and a continuous Drain current (ID) of 52 A at 25°C case temperature. The device utilizes advanced trench technology to achieve a low on-state resistance (RDS(on)) of less than 55 mΩ. With a maximum power dissipation (PD) of 300 W and a junction temperature range up to 150°C, it supports robust thermal performance in TO-247 packages.

Feature Summary

ESD protected gate structure
Advanced Trench Technology for low on-state resistance
Fast switching times with low gate charge
Avalanche rated and 100% avalanche tested

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm RoHS and REACH compliance requirements match your manufacturing standards before finalizing orders.

Selection Notes

Select this component for designs requiring high voltage blocking capability and significant current handling. Ensure adequate heatsinking is provided to maintain the case temperature within limits for the specified 52 A continuous drain current. Verify that the gate drive circuitry aligns with the threshold voltage characteristics for optimal switching efficiency.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET family utilizing trench technology. It is housed in a TO-247 package, suitable for through-hole mounting or panel mounting via the heat flange. The product line includes variants compliant with automotive standards for specialized industrial use cases.