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Product Detailed Parameters
- Description：SIC MOSFET, TO-247-3L, N, 36A, 6
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：18V
- Rds On (Max) @ Id, Vgs：80mOhm @ 15A, 18V
- Vgs(th) (Max) @ Id：4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：75 nC @ 20 V
- Vgs (Max)：+18V, -5V
- Input Capacitance (Ciss) (Max) @ Vds：1480 pF @ 600 V
- FET Feature：-
- Power Dissipation (Max)：175W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247
- Package / Case：TO-247-3
Download product information
Overview
The DIW065SIC080 is a Silicon Carbide (SiC) MOSFET manufactured by Diotec Semiconductor, designed for commercial and industrial applications. It features a TO-247 package with a Drain-Source voltage of 650 V and a continuous drain current of 36 A at 25°C. The device exhibits an on-state resistance of up to 80 mΩ at 175°C and supports a maximum junction temperature of 175°C. Key electrical parameters include a gate charge of 75 nC, turn-on delay of 10 ns, and switching energy of 0.148 mJ.
Feature Summary
- Advanced planar technology enabling low on-state resistance and fast switching times
- Avalanche rated with 100% avalanche testing for enhanced reliability
- Low gate charge characteristics supporting efficient power conversion
- Compliant with RoHS, REACH, and Conflict Minerals regulations
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Charging Stations
- Inverters
Procurement Notes
Verify the specific suffix when ordering: standard versions are commercial grade, while -Q indicates AEC-Q101 compliance and -AQ denotes qualification status. Confirm mechanical data such as tube packaging quantities and soldering conditions before integration. Ensure thermal management aligns with the specified RthJC values for optimal performance.
Selection Notes
Select this component for high-voltage applications requiring robust avalanche capability and low conduction losses. Consider the 650V rating and 36A current capacity for systems operating within standard industrial limits. Evaluate thermal resistance requirements against the 0.21 K/W junction-to-case specification to ensure adequate heat dissipation in the target enclosure.
Part Context
This SiC MOSFET belongs to Diotec's silicon carbide portfolio, utilizing wide-bandgap technology for superior efficiency compared to traditional silicon devices. The TO-247 form factor provides a standardized footprint for power electronics, facilitating integration into existing designs that require higher breakdown voltages and reduced switching losses.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum junction temperature for the DIW065SIC080?
The maximum junction temperature (Tj) is +175°C.
Is the DIW065SIC080 suitable for automotive applications?
Standard versions are for commercial/industrial use. Automotive-grade options are available with the -Q (compliant) or -AQ (qualified) suffixes indicating AEC-Q101 standards.
What is the typical avalanche energy capability?
The datasheet specifies that the device is avalanche rated and undergoes 100% avalanche testing, though specific energy values are not explicitly quantified in the static/dynamic tables.
