DIW120SIC023-AQ

$68.79

Description：MOSFET TO-247-3L N 130A 1200V
Series：-
Mfr：Diotec Semiconductor
Package：Tube

SKU:a02792a53fba Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET TO-247-3L N 130A 1200V
Series：-
Mfr：Diotec Semiconductor
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：125A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：23mOhm @ 75A, 18V
Vgs(th) (Max) @ Id：2.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 18 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：6150 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：600W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

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DIW120SIC023-AQ

Overview

The DIW120SIC023-AQ is a Silicon Carbide (SiC) MOSFET manufactured by Diotec Semiconductor. It features a 1200 V drain-source breakdown voltage and an on-state resistance of 23 mΩ at 25°C. The device supports a continuous drain current of 130 A at 25°C case temperature, with a peak pulse current rating of 295 A. Power dissipation reaches 600 W at 25°C. Operating junction temperatures range from -55°C to +175°C. The component utilizes a TO-247 package.

Feature Summary

Utilizes Silicon Carbide wide bandgap material for high-performance switching
Features low on-state resistance and fast switching times
Includes avalanche rated characteristics verified through 100% avalanche testing
Compliant with RoHS, REACH, and Conflict Minerals regulations

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools

Procurement Notes

Verify the specific suffix designation when ordering. The -AQ suffix indicates the component is in AEC-Q101 qualification status. Confirm that the required automotive reliability standards align with the project specifications before finalizing procurement. Ensure the sourcing channel provides documentation confirming this specific qualification level.

Selection Notes

Select this component for applications requiring high-voltage handling and efficient power conversion. The low gate charge facilitates faster switching speeds compared to traditional silicon devices. Consider the thermal management requirements associated with the TO-247 package to maintain optimal junction temperatures during operation.

Part Context

This part belongs to Diotec's Silicon Carbide MOSFET portfolio designed for commercial and industrial grade applications. The product line targets high-efficiency power systems where reduced energy loss and higher operating frequencies are critical. The SiC technology enables superior performance over conventional silicon-based transistors in demanding environments.