DIW170SIC750

$2.02

Description：DIW170SIC750
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:991e6ce1609c Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

DIW170SIC750 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diotec Semiconductor. Its product description is DIW170SIC750. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DIW170SIC750

Description：DIW170SIC750
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：1700 V
Current - Continuous Drain (Id) @ 25°C：5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：750mOhm @ 2A, 20V
Vgs(th) (Max) @ Id：4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 18 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：380 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：62W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for DIW170SIC750

DIW170SIC750

Single FETs, MOSFETs Overview

The DIW170SIC750 is a Silicon Carbide (SiC) MOSFET manufactured by Diotec Semiconductor, housed in a TO-247-3L package. It features an N-channel configuration with a drain-source breakdown voltage of 1700 V and a continuous drain current of 7.5 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 0.85 Ω at 25°C and 1.13 Ω at 175°C. Key dynamic parameters include a total gate charge of 23.8 nC, turn-on energy of 80 μJ, and turn-off energy of 34 μJ under standard test conditions. Power dissipation is rated at 84 W at 25°C, with a junction temperature range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Advanced Trench Technology for low on-state resistance
Fast switching times with low gate charge
Avalanche rated and 100% avalanche tested
Compliant to RoHS, REACH, and Conflict Minerals regulations

Single FETs, MOSFETs Applications

EV Charging Stations
Solar Inverter
Battery Charger
Power Supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm that the required component matches the commercial/industrial grade specifications unless automotive-grade variants are explicitly needed. Ensure the procurement documentation aligns with the requested reliability standards.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust thermal performance and fast switching capabilities. The 1700 V rating provides significant margin for 1200 V systems. Evaluate the thermal resistance of 1.78 K/W for heat sink design. Consider the avalanche capability for circuits prone to voltage spikes or inductive load switching.

Single FETs, MOSFETs Part Context

This part belongs to Diotec's Silicon Carbide MOSFET portfolio, designed for high-efficiency power conversion. It utilizes advanced trench technology to minimize conduction losses. The TO-247-3L package facilitates through-hole mounting, suitable for industrial and commercial power electronics where reliable thermal management is critical.