DKI03082

Description：MOSFET N-CH 30V 29A TO252
Series：-
Mfr：Sanken Electric USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2faa0f965eb3 Category: Single FETs, MOSFETs Brand: Sanken Electric USA Inc.

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Product introduction

DKI03082 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Sanken Electric USA Inc.. Its product description is MOSFET N-CH 30V 29A TO252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DKI03082

Description：MOSFET N-CH 30V 29A TO252
Series：-
Mfr：Sanken Electric USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1030 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：32W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for DKI03082

DKI03082

Single FETs, MOSFETs Overview

The DKI03082 is a N-channel Trench Power MOSFET manufactured by Sanken Electric USA Inc. It features a Drain-to-Source Voltage (VDS) of 30 V and a Continuous Drain Current (ID) of 29 A at 25 °C case temperature. The device exhibits a maximum static Drain-to-Source On-Resistance (RDS(ON)) of 8.8 mΩ at VGS = 10 V and ID = 25 A, or 13.2 mΩ at VGS = 4.5 V and ID = 12.5 A. Total Gate Charge (Qg) is 7.1 nC at VGS = 4.5 V. It operates within a junction temperature range of -55 °C to 150 °C and is housed in a TO-252 package.

Single FETs, MOSFETs Feature Summary

Capable of operation with a 4.5 V gate drive voltage for low-side switching applications.
Features low total gate charge and low on-resistance to support high-speed switching efficiency.
Includes an integrated body diode with specified reverse recovery characteristics.

Single FETs, MOSFETs Applications

DC-DC converters
Synchronous rectification circuits
General power supplies

Single FETs, MOSFETs Procurement Notes

Verify the component revision against the official datasheet before integration. Confirm that the TO-252 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the specified junction-to-case thermal resistance. Validate that operating voltages remain within the 30 V drain-to-source limit under all transient conditions.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, high-current synchronous rectification where fast switching speeds are required. Evaluate the RDS(ON) performance at the specific gate drive voltage intended for the application. Consider the thermal derating curves to ensure the continuous current rating is maintained at the expected ambient temperatures.

Single FETs, MOSFETs Part Context

This part belongs to Sanken's discrete semiconductor lineup designed for power conversion. It utilizes trench technology to achieve low on-resistance. The manufacturer notes that this specific model is not recommended for new designs, indicating potential obsolescence or the availability of newer alternatives in their portfolio.