DMC1017UPD-13

$0.61

Description：MOSFET N/P-CH 12V 13A PWRDI50
Series：-

SKU:2a988d7f4d98 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 12V 13A PWRDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 9.4A (Ta)
Rds On (Max) @ Id, Vgs：17mOhm @ 11.8A, 4.5V, 32mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.6nC @ 4.5V, 23.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1787pF @ 6V, 2100pF @ 6V
Power - Max：2.3W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PowerDI5060-8
Grade：Automotive
Qualification：AEC-Q101

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DMC1017UPD-13

Overview

The DMC1017UPD-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single POWERDI5060-8 surface-mount package. The N-channel transistor provides a drain-source voltage of 12V, with a maximum continuous drain current of 9.5A at 25°C and an on-resistance of 17mΩ at VGS=4.5V. The P-channel counterpart offers a -12V breakdown voltage, a maximum continuous drain current of -6.9A at 25°C, and an on-resistance of 32mΩ at VGS=-4.5V. Total power dissipation is rated at 2.3W at 25°C.

Feature Summary

Complementary N-Channel and P-Channel Enhancement Mode MOSFETs
POWERDI5060-8 Surface-Mount Package
Qualified to AEC-Q101 Standards for High Reliability

Applications

Notebook Battery Power Management
DC-DC Converters
Loadswitch

Procurement Notes

Verify the component datasheet revision number against the manufacturer's official documentation before finalizing designs. Confirm that the specific ordering suffix matches the required tape and reel packaging quantity. Ensure compliance with RoHS directives and confirm lead-free status requirements are met for the target assembly process.

Selection Notes

Evaluate thermal resistance characteristics under steady-state and transient conditions to ensure adequate heat dissipation for the intended application. Compare gate charge parameters against driver capabilities to optimize switching performance. Verify that the operating temperature range aligns with environmental constraints and that the package dimensions fit the available PCB footprint.

Part Context

This component belongs to the DMC1017 series of complementary MOSFETs from Diodes Incorporated. It utilizes the POWERDI5060-8 package designed for efficient thermal management in compact electronic designs. The device is specifically engineered to minimize on-state losses while maintaining fast switching speeds suitable for portable electronics.