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The DMC1018UPDWQ is a complementary pair enhancement mode MOSFET designed for automotive applications. It integrates an N-channel device (Q1) with a 12V drain-source voltage and a P-channel device (Q2) with a -20V rating. The Q1 exhibits a maximum on-resistance of 17mΩ at VGS=4.5V, while the Q2 shows 38mΩ at VGS=-4.5V. Continuous drain currents reach 31.3A for Q1 and -20.9A for Q2 at TC=+25°C. Packaged in PowerDI5060-8/SWP, it meets AEC-Q101 standards.
Verify component authenticity by checking manufacturer markings against official datasheet codes. Confirm package type matches PowerDI5060-8/SWP specifications. Ensure compliance with RoHS and halogen-free requirements as defined by the supplier. Validate that the ordering suffix corresponds to the correct tape and reel quantity.
Select this component when designing circuits requiring matched complementary MOSFET pairs in a single compact package. Consider the specific gate threshold voltages and on-resistance values for both N-channel and P-channel devices. Evaluate thermal resistance characteristics for the intended operating temperature range and power dissipation requirements.
This part belongs to the DMC1018 series of complementary MOSFETs from Diodes Incorporated. It shares similar packaging and automotive qualification features with other parts in the lineup but differs in specific voltage ratings and current capabilities. The series targets high-efficiency power management solutions.
DMC1017UPD-13
The maximum continuous drain current for the N-channel device (Q1) is 31.3A at a case temperature of +25°C.
Yes, the operating junction temperature range extends up to +150°C, making it suitable for demanding automotive conditions.
It utilizes the PowerDI5060-8/SWP (Type UXD) package, which includes wettable flanks for enhanced inspection.