DMC1018UPDWQ-13

DMC1018UPDWQ-13

$0.89
  • Description:MOSFET N/P-CH 12V 10A PWRDI50
  • Series:-

SKU:7fc405a79c13 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 12V 10A PWRDI50
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel Complementary
  • FET Feature:-
  • Drain to Source Voltage (Vdss):12V, 20V
  • Current - Continuous Drain (Id) @ 25°C:10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)
  • Rds On (Max) @ Id, Vgs:17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:30.4nC @ 8V, 19nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds:1525pF @ 6V, 866pF @ 6V
  • Power - Max:2.6W (Ta), 25W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PowerDI5060-8 (Type UXD)
  • Grade:Automotive
  • Qualification:AEC-Q101

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DMC1018UPDWQ-13

Overview

The DMC1018UPDWQ is a complementary pair enhancement mode MOSFET designed for automotive applications. It integrates an N-channel device (Q1) with a 12V drain-source voltage and a P-channel device (Q2) with a -20V rating. The Q1 exhibits a maximum on-resistance of 17mΩ at VGS=4.5V, while the Q2 shows 38mΩ at VGS=-4.5V. Continuous drain currents reach 31.3A for Q1 and -20.9A for Q2 at TC=+25°C. Packaged in PowerDI5060-8/SWP, it meets AEC-Q101 standards.

Feature Summary

  • Qualified to AEC-Q101 standards with PPAP capability for automotive use
  • Features wettable flanks to improve optical inspection reliability
  • Includes 100% unclamped inductive switching testing in production
  • Manufactured in IATF 16949 certified facilities

Applications

  • Motor control systems
  • Power-management functions
  • DC-DC converters

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet codes. Confirm package type matches PowerDI5060-8/SWP specifications. Ensure compliance with RoHS and halogen-free requirements as defined by the supplier. Validate that the ordering suffix corresponds to the correct tape and reel quantity.

Selection Notes

Select this component when designing circuits requiring matched complementary MOSFET pairs in a single compact package. Consider the specific gate threshold voltages and on-resistance values for both N-channel and P-channel devices. Evaluate thermal resistance characteristics for the intended operating temperature range and power dissipation requirements.

Part Context

This part belongs to the DMC1018 series of complementary MOSFETs from Diodes Incorporated. It shares similar packaging and automotive qualification features with other parts in the lineup but differs in specific voltage ratings and current capabilities. The series targets high-efficiency power management solutions.

Replacement Considerations

DMC1017UPD-13

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device (Q1) is 31.3A at a case temperature of +25°C.

Is the device suitable for high-temperature environments?

Yes, the operating junction temperature range extends up to +150°C, making it suitable for demanding automotive conditions.

What packaging technology does this component utilize?

It utilizes the PowerDI5060-8/SWP (Type UXD) package, which includes wettable flanks for enhanced inspection.

DMC1018UPDWQ-13DMC1018UPDWQ-13
$0.89
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