DMC1028UFDB-7

Overview

The DMC1028UFDB-7 is a complementary enhancement mode MOSFET pair from Diodes Incorporated, integrating an N-channel and P-channel device in a U-DFN2020-6 package. The N-channel transistor features a 12V drain-source voltage (BVDSS) with a maximum on-resistance of 25mΩ at VGS=4.5V and a continuous current rating of 6.0A. The P-channel counterpart offers a -20V BVDSS, a maximum on-resistance of 80mΩ at VGS=-4.5V, and a continuous current rating of -3.4A. Both devices operate within a junction temperature range of -55°C to +150°C.

Feature Summary

• Integrated complementary N-channel and P-channel enhancement mode MOSFETs
• Low profile construction with a maximum height of 0.6mm
• ESD protection rated up to 1.5kV for Human Body Model and 150V for Machine Model
• Totally lead-free and fully RoHS compliant with halogen and antimony free green compound

Applications

• Point of Load (POL) synchronous buck converters stepping down from 3.3V to 1V
• Core voltage supply for Application Specific Integrated Circuits (ASICs)
• Ethernet network controllers including routers, switches, and NICs
• Digital Subscriber Line (DSL) equipment
• Set-top boxes (STBs)

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging quantity and type. The -7 suffix indicates a tape and reel configuration with a standard factory pack size of 3,000 units. Confirm that the component meets all required environmental standards, such as RoHS compliance and moisture sensitivity levels, prior to integration into the final assembly process.

Selection Notes

Select this component for high-efficiency power management applications requiring low on-state resistance and superior switching performance. The N-channel device is optimized for conduction losses during the majority of the duty cycle, while the P-channel device minimizes gate charge to reduce switching losses. Ensure the application voltage and current requirements align with the specified BVDSS and ID ratings for reliable operation.

Part Context

This part belongs to the DMC1028 series of complementary MOSFET pairs designed by Diodes Incorporated. It is specifically engineered to replace discrete MOSFET solutions in space-constrained designs, offering a compact U-DFN2020-6 footprint. The internal schematic includes gate protection diodes for both channels, enhancing robustness in synchronous rectification topologies.

Replacement Considerations

Direct replacements include other Diodes Incorporated complementary MOSFETs with similar voltage and current ratings, such as the DMC1018UPD or DMC1029UFDB. Verify pinout compatibility and thermal characteristics when substituting with parts from other manufacturers to ensure equivalent performance in the target application.

FAQ

What is the maximum operating junction temperature for the DMC1028UFDB?

The maximum operating junction temperature (TJ) for the DMC1028UFDB is +150°C.

Does the DMC1028UFDB include internal ESD protection?

Yes, the device includes integrated gate protection diodes and is ESD protected up to 1.5kV via the Human Body Model (HBM) and 150V via the Machine Model (MM).

What is the recommended gate-source voltage for optimal N-channel performance?

The N-channel MOSFET achieves its minimum on-resistance of 25mΩ at a gate-source voltage (VGS) of 4.5V.