DMC1028UVT-7

$0.60

Description：MOSFET N/P-CH 12V 6.1A TSOT26
Series：-

SKU:1b8c00c582e3 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 12V 6.1A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：12V, 20V
Current - Continuous Drain (Id) @ 25°C：6.1A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs：25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.5nC @ 8V, 11.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds：787pF @ 6V, 576pF @ 10V
Power - Max：800mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：TSOT-26
Grade：-
Qualification：-

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DMC1028UVT-7

Overview

The DMC1028UVT is a complementary pair enhancement mode MOSFET in a TSOT26 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 features a drain-source voltage of 12V, with on-resistance values of 25mΩ at VGS=4.5V, 32mΩ at VGS=2.5V, and 40mΩ at VGS=1.8V. Continuous drain current reaches 6.1A at +25°C. Q2 has a -20V rating, with on-resistance of 80mΩ at VGS=-4.5V, 100mΩ at VGS=-2.5V, 140mΩ at VGS=-1.8V, and 210mΩ at VGS=-1.5V. Its continuous drain current is -3.5A at +25°C.

Feature Summary

Complementary N-Channel and P-Channel Enhancement Mode MOSFETs
Low On-Resistance for High Efficiency Power Management
Fast Switching Speed with Low Input Capacitance
ESD Protected Gate Structure

Applications

Backlighting
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. The DMC1028UVT-7 variant is supplied in tape and reel packaging containing 3,000 units per reel. Confirm compliance with RoHS directives and halogen-free status as specified by the manufacturer's quality definitions before procurement.

Selection Notes

Select this component for low-voltage power management circuits requiring a compact dual-MOSFET solution. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance. Verify thermal dissipation requirements against the junction-to-ambient resistance limits provided in the datasheet.

Part Context

This device belongs to Diodes Incorporated's advanced information product line, designed to minimize on-state resistance while maintaining superior switching performance. It utilizes a molded plastic TSOT26 case material classified as UL 94V-0 flammability rated.