DMC1030UFDB-7

$0.56

Description：MOSFET N/P-CH 12V 5.1A 6UDFN
Series：-

SKU:3a6639c04724 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 12V 5.1A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：5.1A (Ta), 3.9A (Ta)
Rds On (Max) @ Id, Vgs：34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.2nC @ 4.5V, 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1003pF @ 6V, 1028pF @ 6V
Power - Max：1.36W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UDFN Exposed Pad
Supplier Device Package：U-DFN2020-6 (Type B)
Grade：Automotive
Qualification：AEC-Q101

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DMC1030UFDB-7

Overview

The DMC1030UFDB-7 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, integrating one N-channel and one P-channel device in a U-DFN2020-6 (Type B) package. The N-channel transistor features a drain-source voltage of 12V, with an on-resistance of 34mΩ at VGS=4.5V and a continuous current of 5.1A. The P-channel counterpart has a -12V rating, 59mΩ on-resistance at VGS=-4.5V, and supports 3.9A. Both devices operate within a junction temperature range of -55°C to +150°C and are designed for low profile applications.

Feature Summary

Integrated complementary N-channel and P-channel enhancement mode MOSFETs
Low on-state resistance optimized for high efficiency power management
ESD protected gate structure
Totally lead-free and fully RoHS compliant construction

Applications

Load switching circuits
Power management functions
Portable power adaptors

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details. The -7 suffix indicates a tape and reel quantity of 3000 units. Confirm that the required component meets all applicable environmental directives and quality standards before finalizing procurement orders.

Selection Notes

Select this component when a compact dual MOSFET solution is required for low-voltage power paths. Ensure the application gate drive voltage aligns with the specified thresholds for optimal on-resistance performance. Verify thermal dissipation requirements against the provided junction-to-ambient resistance values for the target PCB layout.

Part Context

This part belongs to the DMC1030 series of complementary MOSFETs manufactured by Diodes Incorporated. It utilizes the U-DFN2020-6 package type, providing a small footprint suitable for space-constrained designs. The device is engineered to balance low conduction losses with fast switching characteristics.

Replacement Considerations

Consult the manufacturer's datasheet for qualified alternative part numbers or automotive-grade variants such as the DMC1030UFDBQ. Verify pinout compatibility and electrical parameter tolerances before substituting any other complementary MOSFET pairs.