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Product Detailed Parameters
- Description：MOSFET N/P-CH 12V 5.1A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：5.1A
- Rds On (Max) @ Id, Vgs：34mOhm @ 4.6A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1003pF @ 6V
- Power - Max：1.36W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC1030UFDBQ-7 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications and qualified to AEC-Q101 standards. It integrates an N-channel and P-channel device in a U-DFN2020-6 package with a maximum height of 0.6mm. The N-channel transistor features a drain-source voltage (VDS) of 12V, a continuous drain current (ID) of 5.1A at +25°C, and a maximum on-resistance (RDS(on)) of 34mΩ at VGS=4.5V. The P-channel counterpart has a VDS of -12V, an ID of -3.9A, and a maximum RDS(on) of 59mΩ at VGS=-4.5V. Both devices operate within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low on-resistance for efficient power switching
- Low input capacitance for fast switching speeds
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- Load switches
- Power management functions
- Portable power adaptors
Procurement Notes
Verify the specific ordering suffix when purchasing. The suffix '-7' indicates a tape and reel packing quantity of 3000 units. Confirm that the component meets the required automotive qualification standards, specifically AEC-Q101 and PPAP capability, if intended for such environments. Ensure the U-DFN2020-6 package dimensions align with the PCB footprint design.
Selection Notes
Select this component for low-voltage synchronous rectification or load switch applications requiring compact packaging. The U-DFN2020-6 form factor is suitable for space-constrained designs. Consider the thermal resistance characteristics and the need for adequate copper area on the PCB to manage power dissipation effectively under steady-state conditions.
Part Context
This part belongs to the DMC1030 series of complementary MOSFETs manufactured by Diodes Incorporated. It is explicitly marked as not recommended for new design, with the datasheet recommending the use of the DMC2025UFDBQ as a replacement. The product is manufactured in IATF 16949 certified facilities to support automotive supply chain requirements.
Replacement Considerations
The datasheet explicitly recommends using the DMC2025UFDBQ as a replacement for this component. Verify pinout compatibility and electrical parameter equivalence before substituting.
