DMC10H172SSD-13

Overview

The DMC10H172SSD-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single SO-8 surface-mount package. The N-channel transistor provides a drain-source voltage of 100V, with a maximum on-resistance of 160mΩ at VGS=10V and 200mΩ at VGS=4.5V. The continuous drain current reaches 2.0A at 25°C. The P-channel counterpart features a -100V breakdown voltage, with on-resistances of 250mΩ at VGS=-10V and 300mΩ at VGS=-4.5V. Its continuous drain current is rated at -1.7A at 25°C.

Feature Summary

• Complementary N-Channel and P-Channel Enhancement Mode MOSFETs integrated in a single SO-8 package
• Low input capacitance and low on-resistance for high efficiency power management applications
• Fast switching speed characteristics suitable for DC-DC converters and backlighting
• Totally lead-free, fully RoHS compliant, and halogen/antimony free green device

Applications

• DC-DC converters
• Power management functions
• Backlighting

Procurement Notes

Verify the component authenticity by checking the manufacturer's marking code C10H7SD and date code YYWW on the SO-8 package. Confirm compliance with RoHS 3 and REACH directives as specified in the datasheet. Ensure the ordering suffix -13 corresponds to the 2,500-unit tape and reel carrier format. Validate that the application environment remains within the specified operating temperature range of -55°C to +150°C.

Selection Notes

Select this component when a compact dual MOSFET solution is required for low-voltage power stages. The SO-8 package offers a balance between thermal dissipation and board space constraints. Consider the specific gate threshold voltages and on-resistance values at different VGS levels to ensure compatibility with the driving logic. Evaluate the total power dissipation limits based on the expected ambient temperature and PCB copper area.

Part Context

This part belongs to the DMC series of complementary MOSFETs from Diodes Incorporated. It is designed to replace discrete N-channel and P-channel pairs, simplifying circuit layout and reducing component count. The SO-8 package is widely used in consumer electronics and industrial control boards where moderate current handling and efficient switching are necessary.

Replacement Considerations

Direct replacements must match the 100V rating, SO-8 package, and complementary configuration. Verify pinout compatibility and electrical parameters such as RDS(ON) and Qg. Consult the manufacturer for updated revisions or alternative packages if supply constraints exist.

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device (Q1) is 2.0A at an ambient temperature of +25°C.

Is the DMC10H172SSD-13 qualified for automotive applications?

Standard production units are not explicitly qualified for automotive use. For AEC-Q100/101/104/200 qualification and IATF 16949 manufacturing, contact Diodes Incorporated directly.

What is the typical gate charge for the N-channel MOSFET at VGS=10V?

The typical total gate charge (Qg) for the N-channel device at VGS=10V is 19.6nC.