DMC10H220LSD-13

Overview

The DMC10H220LSD-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) in a single SO-8 package. The N-channel component provides a drain-source voltage of 100V, a continuous drain current of 1.7A at +25°C, and a maximum on-resistance of 220mΩ at VGS=10V. The P-channel component offers a -100V breakdown voltage, a -1.7A continuous current rating, and a maximum on-resistance of 250mΩ at VGS=-10V. Both devices operate within a junction temperature range of -55°C to +150°C.

Feature Summary

• Complementary N-Channel and P-Channel Enhancement Mode MOSFETs integrated in a single package
• Low input capacitance for fast switching performance
• Totally lead-free and fully RoHS compliant with halogen and antimony free green device construction

Applications

• DC-DC Converters
• Power Management Functions
• Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per carrier. Confirm that the component meets the required environmental standards, specifically RoHS 2/3 compliance and the absence of intentionally added lead. Ensure the selected variant matches the intended application requirements regarding thermal management and electrical ratings before finalizing procurement orders.

Selection Notes

Select this component when a compact solution for high-efficiency power management is required. The integrated complementary pair simplifies circuit layout compared to discrete components. Evaluate the thermal resistance characteristics against the expected load conditions. Verify that the gate drive voltages align with the specified thresholds for optimal on-resistance performance across the operating temperature range.

Part Context

This part belongs to the DMC series of complementary MOSFETs from Diodes Incorporated. It is designed as a modern alternative to traditional discrete transistor pairs, offering minimized on-state resistance while maintaining superior switching capabilities. The product represents an advancement in power management integration for space-constrained electronic designs.

Replacement Considerations

Direct replacements must match the SO-8 package, 100V/100V voltage ratings, and complementary channel configuration. Verify pin compatibility and ensure equivalent or lower on-resistance values are maintained for thermal performance. Cross-reference with other Diodes Incorporated complementary MOSFETs if exact specifications differ slightly.

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device (Q1) is 1.7A at a case temperature of +25°C.

Is the DMC10H220LSD-13 suitable for automotive applications?

For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, PPAP capability, and manufacturing in IATF 16949 certified facilities, contact Diodes Incorporated directly.

What is the typical gate threshold voltage range for the N-channel MOSFET?

The gate threshold voltage (VGS(TH)) for the N-channel device ranges from a minimum of 1V to a maximum of 3V under standard test conditions.