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Product Detailed Parameters
- Description：MOSFET N/P-CH 12V 5.6A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：5.6A, 3.8A
- Rds On (Max) @ Id, Vgs：29mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：914pF @ 6V
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMC1229UFDB-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single U-DFN2020-6 package. The N-channel transistor provides a drain-source voltage of 12V, with a maximum continuous drain current of 5.6A at 25°C and a typical on-resistance of 29mΩ at VGS=4.5V. The P-channel counterpart features a -12V breakdown voltage, a maximum continuous drain current of -3.8A at 25°C, and a typical on-resistance of 61mΩ at VGS=-4.5V. Both channels operate within a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary N-channel and P-channel configuration in a compact footprint
- Low on-state resistance for high efficiency power management
- Low input capacitance supporting superior switching performance
- Lead-free construction fully compliant with RoHS directives
Applications
- Load Switching
- Power Management Functions
- Portable Power Adaptors
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantities. The -13 suffix indicates a tape and reel quantity of 10,000 units, while other suffixes may denote different reel sizes. Confirm that the component meets the required environmental standards, such as halogen-free status, prior to final procurement decisions.
Selection Notes
Select this component when a matched dual MOSFET pair is required for low-voltage applications. Ensure the design accommodates the 12V drain-source voltage limit and the thermal constraints defined by the 1.4W steady-state power dissipation rating. Verify that the gate drive voltages align with the specified thresholds for optimal on-resistance performance.
Part Context
This part belongs to the DMC1229 series of complementary MOSFETs from Diodes Incorporated. It shares the same internal die and electrical characteristics as the DMC1229UFDB-7 variant, differing only in the manufacturing packaging format. The series is designed specifically for minimizing on-state resistance while maintaining fast switching speeds.
Replacement Considerations
The DMC1229UFDB-7 serves as a direct functional substitute, offering identical electrical parameters and pinout compatibility. Replacement requires verifying that the alternative packaging format (reel size) fits the existing assembly line equipment without necessitating process changes.
