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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.67A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：670mA, 530mA
- Rds On (Max) @ Id, Vgs：550mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：150pF @ 16V
- Power - Max：450mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMC2004VK-7 is a complementary pair enhancement mode field effect transistor manufactured by Diodes Incorporated. It integrates an N-channel MOSFET (Q1) and a P-channel MOSFET (Q2) in a single SOT563 surface mount package. The N-channel device supports a drain-source voltage of 20 V with a maximum continuous drain current of 670 mA at +25°C, while the P-channel device handles -20 V and -530 mA. Key electrical parameters include a low gate threshold voltage below 1 V for both channels and static on-resistance values ranging from 0.4 Ω to 0.9 Ω depending on the specific channel and drive conditions.
Feature Summary
- Complementary N-channel and P-channel MOSFETs integrated into a single ultra-small surface mount package
- Low gate threshold voltage below 1 V to facilitate efficient logic-level driving
- ESD protected gate structure designed to enhance reliability during handling
- Lead-free finish and RoHS compliant construction
Applications
- Battery protection circuits requiring compact dual-transistor solutions
- Load switch applications utilizing complementary pairs for control
- General-purpose switching in portable electronic devices
Procurement Notes
Verify component authenticity through authorized distribution channels or direct manufacturer verification. Confirm that the received parts match the specified SOT563 package and marking codes. Ensure storage conditions adhere to moisture sensitivity level requirements prior to soldering. Review the datasheet for proper pad layout recommendations to maintain thermal performance.
Selection Notes
Select this component when a small footprint complementary pair is required for low-voltage switching. Verify that the 20 V drain-source rating meets the circuit's maximum voltage stress. Check that the on-resistance characteristics align with the desired conduction losses at the intended gate drive voltage. Consider the thermal resistance limits if operating near the maximum temperature range.
Part Context
This component belongs to the DMC series of complementary MOSFETs produced by Diodes Incorporated. It utilizes silicon technology to provide high-performance switching in a minimal space. The part is designed for general-purpose applications where size constraints are critical. It represents a standard solution for integrating paired transistors without requiring separate discrete components.
Replacement Considerations
The datasheet explicitly recommends using the DMC2400UV as a replacement. Designers should verify pin compatibility and electrical specifications before substituting the DMC2004VK-7 with alternative parts.
