DMC2038LVTQ-7

$0.49

Description：MOSFET N/P-CH 20V 3.7A TSOT23-6
Series：-

SKU:f30a69ac734d Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 3.7A TSOT23-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：3.7A (Ta), 2.6A (Ta)
Rds On (Max) @ Id, Vgs：35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.7nC @ 4.5V, 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：530pF @ 10V, 705pF @ 10V
Power - Max：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：TSOT-23-6
Grade：Automotive
Qualification：AEC-Q101

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DMC2038LVTQ-7

Overview

The DMC2038LVTQ-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a TSOT26 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 offers a drain-source voltage of 20V with an on-resistance of 35mΩ at VGS=4.5V and 56mΩ at VGS=1.8V. Q2 provides -20V with an on-resistance of 74mΩ at VGS=-4.5V and 168mΩ at VGS=-1.8V. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Complementary N-channel and P-channel configuration for efficient power management
Low on-state resistance optimized for high efficiency applications
Fast switching speed combined with low input capacitance
Qualified to AEC-Q101 standards for automotive reliability

Applications

Motor Control
Power Management Functions
DC-DC Converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the standard tape and reel packaging containing 3000 units per reel. Confirm that the 'Q' designation aligns with the required quality or automotive qualification level specified in the current official documentation. Ensure the component status is reviewed as it may be marked not recommended for new designs.

Selection Notes

Select this component when a matched complementary pair is required for synchronous rectification or half-bridge topologies. Evaluate the gate threshold voltage requirements against the available drive voltages, specifically noting performance differences between 4.5V and 1.8V logic levels. Consider the thermal resistance characteristics and package size constraints of the TSOT26 form factor.

Part Context

This part belongs to the DMC2038LVT series of complementary MOSFET pairs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product is intended for high-efficiency power management applications requiring compact solutions.