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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 4.7A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.7A, 3.2A
- Rds On (Max) @ Id, Vgs：40mOhm @ 4.2A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：713pF @ 10V
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMC2041UFDB-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device in a U-DFN2020-6 package with a maximum height of 0.6mm. The N-channel transistor provides a drain-source voltage (BVDSS) of 20V, a continuous drain current (ID) of 4.7A at +25°C, and a maximum on-resistance (RDS(ON)) of 40mΩ at VGS = 4.5V. The P-channel counterpart features a BVDSS of -20V, an ID of -3.2A at +25°C, and a maximum RDS(ON) of 90mΩ at VGS = -4.5V. Both channels include gate protection diodes.
Feature Summary
- Complementary N-channel and P-channel configuration for efficient power management
- Low profile design with a maximum height of 0.6mm
- Integrated ESD protection diodes on both gates
- Totally lead-free and fully RoHS compliant construction
Applications
- Load switches
- Power-management functions
- Portable power adaptors
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity. The -7 suffix indicates a tape and reel carrier containing 3,000 units per reel. Confirm that the U-DFN2020-6 package dimensions align with your PCB footprint requirements before finalizing procurement orders.
Selection Notes
Select this component when a compact complementary MOSFET solution is required for low-voltage applications. Ensure the operating current remains within the 4.7A (N-channel) and -3.2A (P-channel) limits at +25°C. Verify that the 20V breakdown voltage meets the circuit's maximum supply requirements.
Part Context
This part belongs to the DMC2041UFDB series from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device utilizes silicon technology and is housed in a U-DFN2020-6 Type B package suitable for surface mount assembly.
Replacement Considerations
Direct replacements must match the U-DFN2020-6 package and complementary N/P-channel configuration. Verify that substitute parts offer equivalent or lower RDS(ON) values and compatible gate threshold voltages to ensure proper logic level driving.
