DMC2053UFDB-7

DMC2053UFDB-7

$0.09
  • Description:MOSFET N/P-CH 20V 4.6A 6UDFN
  • Series:-

SKU:07b5247774b1 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 20V 4.6A 6UDFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel Complementary
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:4.6A (Ta), 3.1A (Ta)
  • Rds On (Max) @ Id, Vgs:35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7.7nC @ 10V, 12.7nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds:369pF @ 10V, 440pF @ 10V
  • Power - Max:820mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-UDFN Exposed Pad
  • Supplier Device Package:U-DFN2020-6 (Type B)
  • Grade:-
  • Qualification:-

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DMC2053UFDB-7

Overview

The DMC2053UFDB is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single U-DFN2020-6 package. The N-channel component provides a maximum drain-source voltage of 20V, with an on-resistance of 35mΩ at VGS=4.5V and a continuous drain current of 4.6A. The P-channel counterpart offers a -20V breakdown voltage, featuring an on-resistance of 75mΩ at VGS=-4.5V and a continuous drain current of -3.1A. Designed for high-efficiency power management, the device maintains low input capacitance and superior switching performance.

Feature Summary

  • Minimizes on-state resistance while maintaining superior switching performance
  • Features a compact PCB footprint of 4mm²
  • Offers low input capacitance for efficient operation
  • Provides a low profile with a maximum height of 0.6mm

Applications

  • Load switches
  • Power management functions
  • Portable power adaptors

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. The -7 suffix indicates a tape and reel carrier containing 3,000 units per reel. Confirm compliance requirements such as RoHS and halogen-free status directly from the manufacturer's documentation before finalizing procurement specifications.

Selection Notes

Select this component when space-constrained designs require integrated N-channel and P-channel logic-level MOSFETs. Ensure the application gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Verify that the thermal dissipation requirements are met using the provided junction-to-ambient thermal resistance values under the intended PCB copper layout conditions.

Part Context

This part belongs to the DMC2053 series of complementary enhancement mode MOSFETs. It is designed specifically for applications requiring small form factors and high efficiency. The standard commercial version is distinguished from automotive-compliant variants, which are documented under separate datasheets and carry different ordering suffixes.

Replacement Considerations

An automotive-compliant alternative exists under the part number DMC2053UFDBQ. Verify if the specific reliability standards required for the target application necessitate the automotive-grade variant over the standard commercial DMC2053UFDB.

FAQ

What is the maximum operating temperature range for the DMC2053UFDB?

The device supports an operating and storage temperature range from -55°C to +150°C.

How does the on-resistance of the P-channel MOSFET vary with gate voltage?

The P-channel on-resistance is 75mΩ at VGS = -4.5V, increases to 110mΩ at VGS = -2.5V, and reaches 168mΩ at VGS = -1.8V.

What is the total gate charge for the N-channel MOSFET at VGS = 10V?

The total gate charge (Qg) for the N-channel device is 7.7nC when tested at VDS = 10V, ID = 6A, and VGS = 10V.

DMC2053UFDB-7DMC2053UFDB-7
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