DMC2053UFDBQ-13

Overview

The DMC2053UFDBQ-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a U-DFN2020-6 package. The N-channel component provides a drain-source voltage of 20V, with maximum on-resistance values of 35mΩ at VGS=4.5V and 43mΩ at VGS=2.5V. The P-channel component offers a -20V rating, featuring maximum on-resistance of 75mΩ at VGS=-4.5V and 110mΩ at VGS=-2.5V. This configuration supports high-efficiency power management applications.

Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
• Features a compact PCB footprint of 4mm² with a low profile height of 0.6mm maximum.
• Qualified for automotive applications under AEC-Q101 standards, PPAP capable, and manufactured in IATF 16949 certified facilities.
• Constructed with totally lead-free, fully RoHS compliant materials that are halogen- and antimony-free.

Applications

• Load switches
• Power management functions
• Portable power adaptors

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packing quantity of 10,000 units. Confirm compliance with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3). Ensure the application environment aligns with the specified operating temperature range of -55°C to +150°C.

Selection Notes

Select this component when a small form factor is critical due to its 4mm² footprint. Evaluate the gate threshold voltage requirements against the provided typical transfer characteristics. Consider the thermal resistance parameters for steady-state dissipation calculations based on the FR-4 substrate mounting conditions.

Part Context

This part belongs to the DMC2053UFDBQ series of complementary enhancement mode MOSFETs. It is available in different packing quantities, such as the -7 suffix for 3,000 units per reel. The internal schematic connects the drains together, forming a standard complementary pair topology suitable for bridge or half-bridge driver stages.

Replacement Considerations

Direct replacements must match the U-DFN2020-6 package dimensions and electrical ratings. Verify that alternative components meet the same AEC-Q101 qualification if automotive usage is intended. Check pinout compatibility to ensure correct alignment of source, gate, and drain connections.

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device is 4.6A at TA = +25°C and 3.7A at TA = +70°C.

Is the DMC2053UFDBQ-13 suitable for high-temperature environments?

Yes, the device supports an operating junction temperature range from -55°C to +150°C.

What is the total gate charge for the N-channel MOSFET?

The total gate charge is typically 3.6nC at VGS = 4.5V and 7.7nC at VGS = 10V.