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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 4.6A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Ta), 3.2A (Ta)
- Rds On (Max) @ Id, Vgs：35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.6nC @ 4.5V, 5.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：369pF @ 10V, 440pF @ 10V
- Power - Max：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMC2053UVT-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated in a TSOT26 package. It integrates an N-channel and a P-channel device within a single component. The N-channel unit provides a drain-source voltage (BVDSS) of 20V, with a maximum on-resistance (RDS(ON)) of 35mΩ at VGS=4.5V and 43mΩ at VGS=2.5V. Continuous drain current reaches 4.6A at +25°C. The P-channel unit features a BVDSS of -20V, with RDS(ON) values of 74mΩ at VGS=-4.5V and 110mΩ at VGS=-2.5V, supporting a continuous drain current of -3.2A at +25°C.
Feature Summary
- Complementary N-channel and P-channel configuration in a single compact package
- Optimized for low on-state resistance to enhance power management efficiency
- Designed to maintain superior switching performance alongside minimized conduction losses
- Fully RoHS compliant and lead-free construction
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the specific ordering suffix when purchasing. The suffix '-7' indicates a tape and reel packaging format containing 3000 units per reel. Confirm that the required quantity aligns with this standard factory packaging size before placing orders to ensure accurate inventory planning.
Selection Notes
Select this component for applications requiring a matched N-channel and P-channel MOSFET pair in a space-constrained design. Ensure the gate drive voltage meets the minimum requirements for optimal RDS(ON), specifically 4.5V for peak performance or 2.5V for lower voltage logic interfaces.
Part Context
This part belongs to the DMC2053 series of complementary enhancement mode MOSFETs from Diodes Incorporated. It is designed as a next-generation solution intended to minimize on-state resistance while maintaining fast switching speeds for high-efficiency power management applications.
Replacement Considerations
Direct replacements must match the TSOT26 package and provide similar complementary N/P channel characteristics. Verify that substitute components meet the 20V breakdown voltage and comparable on-resistance specifications for both channels.
