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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 4A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta), 3.3A (Ta)
- Rds On (Max) @ Id, Vgs：42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA, 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.5nC @ 10V, 6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：416pF @ 10V, 536pF @ 10V
- Power - Max：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMC2057UVT-13 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, housed in a TSOT26 package. It integrates an N-channel and a P-channel device within a single component to minimize on-state resistance while maintaining superior switching performance. The N-channel unit features a drain-source voltage of 20V, a continuous drain current of 4.0A at +25°C, and an on-resistance of 42mΩ at VGS=4.5V. The P-channel unit offers a -20V breakdown voltage, a -3.3A continuous drain current, and an on-resistance of 70mΩ at VGS=-4.5V.
Feature Summary
- Complementary N-channel and P-channel configuration for efficient power management
- Low on-state resistance combined with fast switching speed
- Low input capacitance and low input/output leakage currents
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all relevant environmental directives, including RoHS compliance and halogen-free requirements, before finalizing procurement plans.
Selection Notes
Select this component when space-constrained designs require a matched N-channel and P-channel MOSFET pair. Ensure the application operates within the specified thermal limits and gate-source voltage ratings. Verify that the required drain current and on-resistance values align with the system's efficiency targets.
Part Context
This part belongs to the DMC2057 series of complementary MOSFETs designed by Diodes Incorporated. It is specifically engineered for high-efficiency power management applications where minimizing board space and reducing component count are critical design priorities.
Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other MOSFET packages or unverified complementary pairs without validating electrical parameters and pin configurations.
