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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel, Common Drain (Complementary)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5.6A (Ta), 3.1A (Ta)
- Rds On (Max) @ Id, Vgs：35mOhm @ 6A, 10V, 120mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.6nC @ 4.5V, 5.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：281pF @ 10V, 476pF @ 10V
- Power - Max：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXB)
- Grade：-
- Qualification：-
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Overview
The DMC2058UNS-13 is a dual N-channel and P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It is housed in the PowerDI 3333-8 surface-mount package, designed for compact circuit board layouts. The device integrates complementary field-effect transistors within a single footprint to facilitate efficient power switching and load management applications.
Feature Summary
- Integrates both N-channel and P-channel MOSFETs into a single compact package
- Designed for surface-mount assembly using the PowerDI 3333-8 form factor
Applications
- DC-DC converter circuits requiring complementary switching elements
- Load switch implementations for low-voltage power rails
- Battery protection and management systems
Procurement Notes
Verify the specific suffix against official Diodes Incorporated documentation to confirm exact electrical characteristics and tape-and-reel specifications. Ensure the component meets required RoHS compliance standards for the target market. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and current production status before procurement.
Selection Notes
Select this component when space-constrained designs require integrated N and P-channel functionality. Evaluate the thermal performance of the PowerDI 3333-8 package against the expected power dissipation requirements. Confirm that the voltage ratings align with the system's maximum operating conditions to ensure reliable operation under all load scenarios.
Part Context
This component belongs to the DMC series of dual MOSFETs from Diodes Incorporated. The series focuses on providing complementary transistor pairs in small outline packages to reduce board area. The UNS-13 designation indicates the specific packaging and taping configuration used for automated assembly processes.
Replacement Considerations
Consult the official datasheet for verified pin-compatible alternatives within the same product family. Ensure any substitute maintains identical channel configurations and package dimensions.
